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BD139G

Manufacturer:

On Semiconductor

Mfr.Part #:

BD139G

Datasheet:
Description:

BJTs TO-225-3 Through Hole NPN 1.25 W Collector Base Voltage (VCBO):80 V Collector Emitter Voltage (VCEO):80 V Emitter Base Voltage (VEBO):5 V

ParameterValue
Voltage Rating (DC)80 V
Length7.74 mm
Width2.66 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height11.04 mm
PackagingBulk
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Current Rating1.5 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation1.25 W
Power Dissipation1.25 W
Max Collector Current1.5 A
Collector Emitter Breakdown Voltage80 V
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)80 V
Collector Base Voltage (VCBO)80 V
Collector Emitter Saturation Voltage500 mV
Emitter Base Voltage (VEBO)5 V
hFE Min25
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Max Cutoff Collector Current100 nA
Transistor TypeNPN

Stock: 166

Distributors
pcbx
Unit Price$0.78634
Ext.Price$0.78634
QtyUnit PriceExt.Price
1$0.78634$0.78634
10$0.63658$6.36580
25$0.58418$14.60450
50$0.53610$26.80500
100$0.49198$49.19800
300$0.46930$140.79000
500$0.44766$223.83000
1000$0.42476$424.76000